KTC4075F

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE : hFE=70~700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA2014F. Thin Fine Pitch Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 60 50 5 150 30 50 150 -55 150 UNIT V V V mA mA mW A G K KTC4075F EPITAXIAL PLANAR NPN TRANSISTOR C JD E B 2 DIM MILLIMETERS A 0.6+_ 0.05 3 B 0.8 +_ 0.05 1 C 0.38+0.02/-0.04 D 0.2 +_ 0.05 E 1.0+_ 0.05 G 0.35+_ 0.05 J 0.1+_ 0.05 K 0.15+_ 0.05 1. EMITTER 2. BASE 3. COLLECTOR TFSM Marking Type Name L hFE Rank ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE (Note) VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA Transition Frequency fT VCE=10V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Noise Figure VCE=6V, IC=0.1mA, NF f=1kHz, Rg=10k Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400, BL(8):350~700 MIN. 70 80 - TYP. 0.1 2.0 MAX. 0.1 0.1 700 0.25 3.5 UNIT A A V MHz pF - 1.0 10 dB 2005. 4. 21 Revision No : 0 1/3 COLLECTOR C...