KTC4375

J B EG SEMICONDUCTOR TECHNICAL DATA KTC4375 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTA1663. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage VEBO 5 Collector Current IC 1.5 Base Current IB 0.3 Collector Power Dissipation PC 500 PC* 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : KTC4375 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V A A mW W A H L M N DD K FF C 123 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER G DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1.40 +_ 0.10 0.19 +_ 0.10 0.47 +_ 0.10 SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO DC Current Gain hFE (Note) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE Classification O:100 200, Y:160 320 TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=0.03A VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz 2013...