N-Channel Enhancement Mode MOSFET
HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged ...
Description
HY3210P/M/B/PS/PM
Features
100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS G TO-220FB-3L
DS G TO-220FB-3M
DS G TO-263-2L
Applications
Switching application Power Management for Inverter Systems.
DS G TO-3PS-3L
D
DS G TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P HY3210
YYÿ XXXJWW G
PS HY3210
YYÿ XXXJWW G
M HY3210
YYÿ XXXJWW G
PM HY3210
YYÿ XXXJWW G
B HY3210
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M
M : TO-220FB-3M PS: TO-3PS-3L
Date Code YYXXX WW
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY3210P/M/B/PS/PM
Absolute Maximum Ratin...
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