Power Transistor. 2N3053 Datasheet

2N3053 Transistor. Datasheet pdf. Equivalent

Part 2N3053
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3053 DESCRIPTI.
Manufacture Inchange Semiconductor
Datasheet
Download 2N3053 Datasheet



2N3053
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3053
DESCRIPTION
·Maximun SOA Curve
·High gain-bandwidth Product
: fT = 100MHz
·Low Leakage Current
APPLICATIONS
·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
VCER
Collector-Emitter Voltage
Collector – Emitter Sustaining Voltage
40
50
V
V
VCEX
Collector - Emiiter Voltage
60 V
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
5V
0.7 A
Collector Power Dissipation@TA=25
1
PC
Collector Power Dissipation@TC=25
5
TJ Junction Temperature
200
W
W
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
175
35
UNIT
/W
/W
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark
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2N3053
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N3053
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA ; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
VCEO(SUS) Collector – Emitter Voltage
VCER(SUS) Collector – Emitter Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC=0.1mA ; IE=0
IB = 100mA ;IB = 0
RBE = 10W IC= 100mA
IC=150mA; IB= 15mA
IC= 150mA ; IB=15mA
VCE=30V; IB=0
IEBO Emitter Cutoff Current
VEB= 4V; IC=0
h21E Static Forward Current Transfer ratio IC= 0.15A ; VCE= 10V
fT Current Gain-Bandwidth Product
IC= 50mA ; VCE= 10V;f=20MHz
C22b Output Capacitance
VCB = 10V f =1MHz
C11b Input Capacitance
VCB = 10V f =1MHz
MIN MAX UNIT
60 V
5V
40 V
50 V
1.4 V
1.7 V
0.25 uA
0.25 uA
50 250
100 MHz
15 pF
80 pF
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark
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