2N3440

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3440 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 20mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3440 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 4mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 20m A ; VCE= 10V MIN MAX UNIT 250 V 300 V 7 V 0.5 V 0.1 mA 0.1 mA 40 160 isc Website：...