Power Transistor. 2N6834 Datasheet

2N6834 Transistor. Datasheet pdf. Equivalent

Part 2N6834
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining .
Manufacture Inchange Semiconductor
Datasheet
Download 2N6834 Datasheet

2N6834 Datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor DES 2N6834 Datasheet
Recommendation Recommendation Datasheet 2N6834 Datasheet




2N6834
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
850 V
450 V
6V
5A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
8A
PC Collector Power Dissipation@TC=25125
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
1.4
UNIT
/W
isc Product Specification
2N6834
isc websitewww.iscsemi.cn
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2N6834
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6834
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
450 V
VCE(sat)-1
VCE(sat)-2
VBE(sat)
ICEV
ICER
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
IC= 1.5A; IB= 0.15A
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100
VCEV= 850V;VBE(off)= 1.5V
VCEV= 850V;VBE(off)= 1.5V;TC=100
VCE= 850V; RBE= 50Ω,TC= 100
1.0 V
2.5
2.5
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
IEBO Emitter Cutoff Current
VEB= 6.0V; IC=0
1.0 mA
hFE-1
hFE-2
DC Current Gain
DC Current Gain
IC= 3A ; VCE= 5V
IC= 5A ; VCE= 5V
7.5 30
5
fT Current Gain-Bandwidth Product
COB Output Capacitance
Switching times;Resistive Load
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
IC= 0.25A ;VCE= 10V; ftest=10MHz
IE= 0; VCB= 10V; ftest=1.0kHz
15
20
75 MHz
200 pF
IC= 3A , VCC= 250V;
IB1= 0.4A; IB2= -0.8A;
PW= 30μs; RB2= 8Ω
Duty Cycle2.0%
0.03 0.1
0.1 0.3
1.0 3.0
0.06 0.3
μs
μs
μs
μs
isc websitewww.iscsemi.cn
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