2SA1028

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 95 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1028 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.1A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V 2SA1028 MIN TYP. MAX UNIT -100 V -100 V -5 V -1.2 V -1.8 V -10 μA -10 μA 50 60 MHz Notice： ISC reserves the rights to mak...