2SA1214

isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1214 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -60V; IE= 0 -1.0 V -1.5 V -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA hFE DC Current Gain IC= -150mA; VCE= -2V 60 320 fT Current-Gain—Bandwidth Product IC= -100mA; VCE= -10V 35 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz ...