2SA1546

isc Silicon PNP Power Transistor DESCRIPTION ·The 2SA1546 is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. FEATURES ·Collector–Emitter Sustaining Voltage- : VCBO = -250 V(Min) ·Complement to Type 2SC4001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.1 A -7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1546 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE DC Current Gain IC= -10m A ; VCE=-10V VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA ;IB= -1mA VBE(sat) Base-Emitter Saturation Voltage IC= -10mA ;IB= -1mA  hFE Classifications M L K 60-120 100-200 160-300 2SA1546 MIN MAX UNIT -100 nA -100 nA 60 300 -0.3 V -1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herei...