2SA1606

isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -10mA; VCE= -5V ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -300mA; VCE= -5V  hFE Classifications D E 60-120 100-200 2SA1606 MIN TYP. MAX UNIT 180 V 160 V 6 V -0.5 V -1.5 V -10 μA...