2SA1657

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature -0.5 A 20 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1657 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -500mA; VCE= -10V COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -500m A; VCE= -10V 2SA1657 MIN TYP. MAX UNIT -150 V -1.5 V -10 μA -10 μA 40 140 55 pF 4 MHz NOTICE： ISC reserves the ...