2SA1930

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications isc Product Specification 2SA1930 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1930 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB=- 0.1A VBE(on) Base-Emitter Voltage IC= -1A ; VCE= -5V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V ; IC= 0 hFE-1 DC Current Gain IC= -0.1A ; VCE= -5V hFE-2 DC Current Gain IC= -1A ; VCE= -5V Cob Collector Output Capacitance IE= 0 ; VCB= -10V,f=1MHz fT Current-Gain—Bandwidth Product IC= -0.3A ; VCE= -5V MIN TYP. MAX UNIT -180 V -1.0 V -1.5 V -5 μ A -5 μ A 100 320 50 16 pF 200 MHz isc website：www.iscsemi.cn 2 isc & iscsemi ...