isc Silicon PNP Power Transistor
2SA2121
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-...
isc Silicon
PNP Power
Transistor
2SA2121
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Complement to Type 2SC5949 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.5
A
220
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
PNP Power
Transistor
2SA2121
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on)
Base-Emitter On Voltage
IC= -8A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
hFE-2
DC Current Gain
IC= -8A ; VCE= -5V
COB
Output Capacitance
IE=0 ; VCB= -10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=-1A ; VCE= -5V
MIN TYP. MAX UNIT
-200
V
-3.0
V
-1.5
...