N-Channel MOSFET
APW8707
High-Performance, High-Current DrMOS Power Module
Features
• 4.5V ~ 5.5V Input Range for VCC • 4.5V ~ 25V Inpu...
Description
APW8707
High-Performance, High-Current DrMOS Power Module
Features
4.5V ~ 5.5V Input Range for VCC 4.5V ~ 25V Input Range for VIN Power-On-Reset Monitoring on VCC Pin Up to 25A (peak), 13A (continuous) output current
scale Adjustable Over-Current Protection Threshold Up to 1.5MHz PWM operation Built-in Tri-State PWM input Function Built in EN Timing Control function Build in N-CH MOSFET for high side, N-CH MOSFET
for low side Skip Mode Operation Over-Temperature Protection TQFN 5x5-30 package Lead Free and Green Devices Available (RoHS
Compliant)
General Description
The APW8707 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8707 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset(POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707 also can be enabled or disabled by other power...
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