PFF18N50

Feb 2009 PFP18N50/PFF18N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰ Remarkable Switching Characteristics ‰ Unequalled Gate Charge : 48.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V APPLICATION ‰ High current, High speed switching ‰ Suitable for power supplies, adaptors and PFC ‰ SMPS (Switched Mode Power Supplies) PFP18N50/PFF18N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain { Gate { ● ◀▲ ● ● Source { TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP18N50 PFF18N50 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 18.0 18.0* 11.5 11.5* 72 72* ±30 950 18 24 5.5 PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 240 55 1.85 0.42 -55 to +150 300 Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Jun...