MOSFET Transistor. 2N6756 Datasheet

2N6756 Transistor. Datasheet pdf. Equivalent

Part 2N6756
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6756 DESCRIPTIO.
Manufacture Inchange Semiconductor
Datasheet
Download 2N6756 Datasheet

2N6756 Datasheet
2N6756 Datasheet
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc 2N6756 Datasheet
Recommendation Recommendation Datasheet 2N6756 Datasheet




2N6756
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6756
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·IDSS RDS(ON) ,specified at elevated temperature
·Low drive reqirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
100 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=3714 A
Total Dissipation@TC=25
75 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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2N6756
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2N6756
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 9A
IGSS Gate Source Leakage Current
VGS= 20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0
VSD Diode Forward Voltage
IF= 14A; VGS= 0
MIN MAX UNIT
100 V
24V
0.18 Ω
100 nA
1 mA
1.8 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn





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