Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6758
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements
APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃ 9 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2N6758
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 6A
IGSS Gate Source Leakage Current
VGS= 20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0
VSD Diode Forward Voltage
IF= 9A; VGS= 0
MIN MAX UNIT 200 V
24V 0.4 Ω 100 nA 1 mA 1.6 V
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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