Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N7081
DESCRIPTION ·TO–220 ISOLATED HERMETIC PACKAGE ·LOW RDS(ON) ·SIMPLE DRIVE REQUIREMENTS
APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
100 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃ 11 A
Total Dissipation@TC=25℃
45 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient
2.8 ℃/W 80 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2N7081
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.7A
IGSS Gate Source Leakage Current
VGS=±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS= 0
VSD Diode Forward Voltage
IF= 11A; VGS= 0
MIN MAX UNIT 100 V
24V 0.15 Ω ±100 nA 25 uA 2.5 V
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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