2SC3130

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130 DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 15 V 10 V 3V 50 mA 0.15 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 10 V 0.5 V 1 μA hFE DC Current Gain IC= 5mA ; VCE= 4V 75 400 fT Current-Gain—Bandwidth Product IE= -5mA ; VCB= 4V; f= 200MHz 1.4 1.9 2.5 GHz COB Output Capacitance IE= 0 ; VCB= 4V; f= 1MHz 1.4 pF rbb’ CC Base Time Constant Cre Feed-Back Capacitance IE= -5mA ; VCB= 4V; f= 31.9MHz IE= 0 ; VCB= 4V; f= 1.0MHz 11 0.45 ps pF ‹ hFE Classification Class P Marking ISP hFE 75-130 Q ISQ 110-220 R ISR 200-400 isc...