2SC3547A

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547A DESCRIPTION ·High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 V 12 V 3V 30 mA 15 mA 0.15 W 125 ℃ -55~125 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 10V; IE= 0 VEB= 1V; IC= 0 0.1 μA 1.0 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 35 130 fT Current-Gain—Bandwidth Product COB Output Capacitance IC= 10mA ; VCE= 10V IE= 0 ; VCB= 10V; f= 1.0MHz 34 GHz 1.05 1.35 pF rbb’ CC Base Time Constant IC= 5mA ; VCB= 10V;f= 30MHz 4.5 10 ps isc website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547A isc website：www.iscsemi.cn 3 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Prod...