2SC3582

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 8V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 8V;f= 1.0GHz MAG Maximum Available Gain IC= 20mA ; VCE= 8V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 8V;f= 1.0GHz MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 250 8 GHz 0.4 0.9 ...