2SC3585

isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forVHF, UHF and CATV high frequency wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3585 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademar isc Silicon NPN RF Transistor 2SC3585 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter-Base Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidth Product Cre Output feedback capacitance | S21e |2 Power gain NF Noise factor CONDITIONS IC= 1uA ; IE= 0 VCB= 10V; IE= 0 VEB= 1V; IE= 0 IC= 10mA ; VCE= 6V VCE=6V,IC=10mA,f=1GHz VCB=10V,IE=0mA,f=1MHz VCE=6V,IC=10mA,f=2GHz VCE=6V,IC=5mA,f=2GHz MIN TYP. MAX UNIT 20 V 0.1 μA 0.1 μA 50 150 300 10 GHz 0.65 pF 5.5 dB 2.5 dB  hFE Classifications ...