isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage, High Speed Switching ·Wide Area of Safe Operation ·Good Lin...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage, High Speed Switching ·Wide Area of Safe Operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
5
A
175 W
3.5
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3738
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
2SC3738
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 4A; VCE= 5V
Switching Times
MIN TYP. MAX UNIT
800
V
1.5
V
2.0
V
100 μA
100 μA
6
20
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A, IB1= 0.8A; IB2= -1.6A, VCC= 250V
1.0 μs 3.5...