isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3793
DESCRIPTION ·Low Noise ·High Gain ·100% avalanche tested ...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3793
DESCRIPTION ·Low Noise ·High Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in UHF local oscillator.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3793
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
20
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
15
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
0.5
V
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
1
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1
μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
30
200
fT
Current-Gain—Bandwidth Product
IC= 5mA ; VCE= 10V
2.9
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
0.7 1.0 pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained h...
