2SC3838

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3838 DESCRIPTION ·Low Noise NF = 3.5 dB TYP. @VCE = 6 V, IC = 2 mA, f = 500 MHz ·High Current-Gain Bandwidth Product fT = 3.2 GHz TYP. @VCE = 10 V, IC = 10 mA, f = 500 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3838 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 11 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.5 μA VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA 0.5 V hFE DC Current Gain IC= 5mA ; VCE= 10V 56 180 fT Current-Gain—Bandwidth Product IC= ...