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2SC3856-P Data Sheet

Silicon NPN Transistor

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2SC3856-P

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.

2SC3856-P

Download 2SC3856-P Datasheet

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CE.




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