INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collecto...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
180 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
15
A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
4A 130 W 150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3856-P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
ICBO Collector Cutoff Current
VCB= 200V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
hFE DC Current Gain COB Output Capacitance
fT Current-Gain—Bandwidth Product Switching times
IC= 3A ; VCE= 4V IE= 0 ; VCB= 10V;ftest= 1.0MHz IE=-0.5A ; VCE= 12V
ton Turn-on Time tstg Storage Time tf Fall Time
IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V
MIN TYP. MAX UNIT 180 V
2.0 V 100 μA 100 μA 70 140 300 pF 20 MHz
0.5 μs 1.8 μs 0.6 μs
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc P...