2SC4227

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4227 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC4227 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 7mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 3V;f= 1.0MHz IC= 7mA ; VCE= 3V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 3V;f= 1.0GHz MIN TYP. MAX UNIT 0.8 μA 0.8 μA 40 240 4.5 7.0 GHz 0.45 0.9 pF 10 12 dB 1.4 2.7 dB  hFE Classification Class R33 R34 R35 Marking R33 R34 R35 hFE 40-90 70-150 110-240 NOTICE： ISC reserves the rights to make changes of the content herein the...