B1362

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SB1362 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -150 -150 -5 -9 -15 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A VBE Base-emitter on voltage IC=-7A;VCE=-5V ICBO Collector cut-off current VCB=-150V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-20mA ; VCE=-5V hFE-2 DC current gain IC=-1A ; VCE=-5V hFE-3 DC current gain IC=-7A ; VCE=-5V fT Transition frequency IC=-0.5A ; VCE=-5V COB Collector output capacitance f=1MHz;VCB=-10V Product Specification 2SB1362 MIN TYP. MAX UNIT -150 V -2.0 V -1.8 V -50 µA -50 µA ...