isc N-Channel MOSFET Transistor
2SK1723
DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(M...
isc N-Channel MOSFET
Transistor
2SK1723
DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power supplies, converters and power motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
12
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 6A
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
2SK1723
MIN MAX UNIT
600
V
1.5
3.5
V
0.65
Ω
±100 nA
300
µA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality...