1N5402

CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N5408 Taiwan Semiconductor FEATURES - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-201AD Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Weight: 1.2 g (approximately) DO-201AD MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted) PARAMETER 1N 1N 1N 1N 1N 1N 1N SYMBOL 5400 5401 5402 5404 5406 5407 5408 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load VRRM VRMS VDC IF(AV) IFSM 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 3 200 Rating for fusing (t<8.3ms) I2t 166 Maximum instantaneous forward voltage (Note 1) @3A VF 1.0 Maximum reverse current @ rated VR Typical junction capacitance (Note 2) TJ=25°C TJ=125°C Typical thermal resistance Operating junction temperature range Storage temperature range Note1: Pulse Test with PW=300μs, 1% Duty Cycle IR CJ RθJA TJ TSTG 5 100 50 40 - 55 to +150 - 55...