DatasheetsPDF.com

GP1006 Dataheets PDF



Part Number GP1006
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated Rectifiers
Datasheet GP1006 DatasheetGP1006 Datasheet (PDF)

GP1001 - GP1007 Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" .

  GP1006   GP1006



Document
GP1001 - GP1007 Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.82 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER GP GP GP GP GP GP SYMBOL 1001 1002 1003 1004 1005 1006 Maximum repetitive peak reverse voltage Maximum RMS voltage VRRM VRMS 50 100 200 400 600 800 35 70 140 280 420 560 Maximum DC blocking voltage VDC 50 100 200 400 600 800 Maximum average forward rectified current IF(AV) 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 125 GP 1007 1000 700 1000 Maximum instantaneous forward voltage (Note 1) @5A VF 1.1 Maximum reverse current @ rated VR TJ=25°C TJ=125°C IR Typical junction capacitance (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle CJ RθJC TJ TSTG Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. 5 200 30 3 - 55 to +150 - 55 to +150 UNIT V V V A A V μA pF °C/W °C °C Version: F1511 GP1001 - GP1007 Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX (*) GP100x (Note 1) H C0 G Note 1: "x" defines voltage from 50V (GP1001) to 1000V (GP1007) *: Optional available PACKAGE TO-220AB EXAMPLE EXAMPLE PART NO. GP1001HC0G PART NO. GP1001 PART NO. SUFFIX H PACKING CODE C0 PACKING CODE SUFFIX G PACKING 50 / Tube DESCRIPTION AEC-Q101 qualified Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE 12 FIG. 2 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 INSTANTANEOUS REVERSE CURRENT (μA) AVERAGE FORWARD CURRENT(A) 10 10 8 6 Resistive of 4 inductive load 2 0 50 100 CASE TEMPERATURE(°C) TJ=125°C 1 TJ=25°C 0.1 150 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT(A) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 150 8.3ms single half sine wave 125 100 75 50 25 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD CURRENT (A) 1000 FIG. 4 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 10 1 0.1 0.6 0.8 Pulse width=300μs 1% duty cycle 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) 1.8 2 Version: F1511 JUNCTION CAPACITANCE (pF) GP1001 - GP1007 Taiwan Semiconductor FIG. 5 TYP.


GP1005 GP1006 GP1007


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)