Document
GP1601 – GP1607
Taiwan Semiconductor
16A, 50V - 1000V Standard Rectifier
FEATURES
● AEC-Q101 qualified available ● High efficiency, low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converters ● Switching mode converters and inverters ● General purpose
KEY PARAMETERS
PARAMETER VALUE UNIT
IF
16
A
VRRM
50 - 1000 V
IFSM
150
A
TJ MAX
150
°C
Package
TO-220AB
Configuration
Dual dies
MECHANICAL DATA
● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.82g (approximately)
TO-220AB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
GP GP GP GP SYMBOL 1601 1602 1603 1604
Marking code on the device
GP GP GP GP 1601 1602 1603 1604
GP
1605 GP 1605
Repetitive peak reverse voltage
VRRM
50 100 200 400 600
Reverse voltage, total rms value VR(RMS)
35
70 140 280 420
Forward current
IF
16
Surge peak forward current,
8.3ms single half sine wave
IFSM
150
superimposed on rated load
Junction temperature
TJ
-55 to +150
Storage temperature
TSTG
-55 to +150
GP 1606
GP 1606 800
560
GP 1607 UNIT
GP 1607 1000 V 700 V
A
A
°C °C
1
Version: G2104
GP1601 – GP1607
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-case thermal resistance
SYMBOL RӨJC
TYP 1.5
UNIT °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage per diode(1)
IF = 8A, TJ = 25°C
VF
Reverse current @ rated VR per diode(2) TJ = 25°C
IR
TJ = 125°C
Junction capacitance per diode
1MHz, VR = 4.0V
CJ
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
TYP 50
MAX 1.1 10 250 -
UNIT V µA µA pF
ORDERING INFORMATION
ORDERING CODE(1)(2)
PACKAGE
GP16x
TO-220AB
GP16xH
TO-220AB
Notes: 1. “x” defines voltage from 50V(GP1601) to 1000V(GP1607) 2. “H” means AEC-Q101 qualified
PACKING 50 / Tube 50 / Tube
2
Version: G2104
GP1601 – GP1607
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
AVERAGE FORWARD CURRENT (A)
20
16
12
8
4
0 25
50
75
100
125
150
CASE TEMPERATURE (°C)
Fig.3 Typical Reverse Characteristics
CAPACITANCE (pF)
Fig.2 Typical Junction Capacitance
1000
100
10
f=1.0MHz Vsig=50mVp-p
1
1
10
100
REVERSE VOLTAGE (V)
Fig.4 Typical Forward Characteristics
INSTANTANEOUS REVERSE CURRENT (µA)
10 TJ=125°C
1
TJ=25°C 0.1
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
100 10
1 10
0.1
UF1DLW TJ=125°C
TJ=25°C
1
0.01
Pulse width 300μs
1% duty cyPculelse width
00..1001 0.6 0.3 0.08.4 01..50 0.61.2 0.7 1.40.8 10.6.9
11.8 1.1 1.2
FORWARD VOLTAGE (V)
Fig.5 Maximum Non-Repetitive Forward Surge Curren.