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GP1601 Dataheets PDF



Part Number GP1601
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated Rectifiers
Datasheet GP1601 DatasheetGP1601 Datasheet (PDF)

GP1601 – GP1607 Taiwan Semiconductor 16A, 50V - 1000V Standard Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converters ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF 16 A VRRM 50 - 1000 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configurat.

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GP1601 – GP1607 Taiwan Semiconductor 16A, 50V - 1000V Standard Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converters ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF 16 A VRRM 50 - 1000 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.82g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER GP GP GP GP SYMBOL 1601 1602 1603 1604 Marking code on the device GP GP GP GP 1601 1602 1603 1604 GP 1605 GP 1605 Repetitive peak reverse voltage VRRM 50 100 200 400 600 Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 Forward current IF 16 Surge peak forward current, 8.3ms single half sine wave IFSM 150 superimposed on rated load Junction temperature TJ -55 to +150 Storage temperature TSTG -55 to +150 GP 1606 GP 1606 800 560 GP 1607 UNIT GP 1607 1000 V 700 V A A °C °C 1 Version: G2104 GP1601 – GP1607 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL RӨJC TYP 1.5 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL Forward voltage per diode(1) IF = 8A, TJ = 25°C VF Reverse current @ rated VR per diode(2) TJ = 25°C IR TJ = 125°C Junction capacitance per diode 1MHz, VR = 4.0V CJ Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TYP 50 MAX 1.1 10 250 - UNIT V µA µA pF ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE GP16x TO-220AB GP16xH TO-220AB Notes: 1. “x” defines voltage from 50V(GP1601) to 1000V(GP1607) 2. “H” means AEC-Q101 qualified PACKING 50 / Tube 50 / Tube 2 Version: G2104 GP1601 – GP1607 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve AVERAGE FORWARD CURRENT (A) 20 16 12 8 4 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 1000 100 10 f=1.0MHz Vsig=50mVp-p 1 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS REVERSE CURRENT (µA) 10 TJ=125°C 1 TJ=25°C 0.1 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) 100 10 1 10 0.1 UF1DLW TJ=125°C TJ=25°C 1 0.01 Pulse width 300μs 1% duty cyPculelse width 00..1001 0.6 0.3 0.08.4 01..50 0.61.2 0.7 1.40.8 10.6.9 11.8 1.1 1.2 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Curren.


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