P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No. : 1/9
P-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTA025P01N6
BVDSS ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
VGS=-4.5V, ID=-4.5A
RDSON(TYP) VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-2.2A
-14V -7.1A -6.0A 22.5mΩ 30.3mΩ 49.0mΩ
Features
Simple drive requirement Low on-resistance Small package outline Pb-free lead plating and halogen-free package
Equivalent Circuit
MTA025P01N6
G:Gate S:Source D:Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage Gate-Source Voltage
Parameter
TC=25 °C, VGS=-4.5V
Continuous Drain Current
TC=70 °C, VGS=-4.5V TA=25 °C, VGS=-4.5V (Note 1)
TA=70 °C, VGS=-4.5V (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C TA=25 °C
(Note 1)
TA=70 °C
(Note 1)
Operating Junction Temperature and Storage Temperature Range
Symbol VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits -14 ±8 -7.1
-5.7
-6.0
-4.8 -40 3.1
2.0
2.0
1.25
-55~+150
Unit V A
W °C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
40
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit °C/W
MTA025P01N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C089N6 Is...
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