MTA600N02KS3

CYStech Electronics Corp. N-Channel MOSFET MTA600N02KS3 Spec. No. : C144S3 Issued Date : 2016.04.11 Revised Date : Page No. : 1/8 Features Low on-resistance ESD protected gate High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package BVDSS ID @VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=0.5A RDSON@VGS=2.5V, ID=0.5A RDSON@VGS=1.8V, ID=0.05A RDSON@VGS=1.5V, ID=0.02A RDSON@VGS=1.2V, ID=0.01A 20V 0.55A 0.213Ω(typ.) 0.275Ω(typ.) 0.332Ω(typ.) 0.447Ω(typ.) 0.937Ω(typ.) Symbol MTA600N02KS3 D G G：Gate S S：Source D：Drain Outline SOT-323 D GS Ordering Information Device Package Shipping MTA600N02KS3-0-T1-G SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA600N02KS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C144S3 Issued Date : 2016.04.11 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ VGS=4.5V, TA=25°C Pulsed Total Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤5% *2. When the device is mounted on ...