Document
CYStech Electronics Corp.
Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB2D5N03BQ8
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package
BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A
RDSON@VGS=4.5V, ID=15A
30V 21A 30A 2.7mΩ(typ)
3.6mΩ(typ)
Symbol
MTB2D5N03BQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device MTB2D5N03BQ8-0-T3-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTB2D5N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=30A, VDD=20V Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation
TA=70℃ TC=25℃
TC=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS VGS IDSM
ID IDM IAS EAS EAR PDSM
PD
Tj, Tstg
Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 2/9
Limits
30 ±20 21 16.8 30 19 120 *1 30 225 *3 0.6 *2 3.1 *4 2.0 *4 6.3 2.5
-55~+150
Unit
V
A
mJ W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Rth,j-c Rth,j-a
20 40
*4
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. 100% tested by conditions of L=0.5mH, VGS=10V, IAS=19A, VDD=20V.
4. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS VGS(th) GFS *1 IGSS
IDSS
RDS(ON) *1
30 1.0 -
2.5
V
VGS=0V, ID=250μA VDS = VGS, ID=250μA
- 23.6
-
S VDS =10V, ID=18A
- - ±100 nA VGS=±20V
-
-
1 25
μA
VDS =30V, VGS =0V VDS =30V, VGS =0V, Tj=85°C
-
2.7 3.6
3.4 4.7
mΩ
VGS =10V, ID=19A VGS =4.5V, ID=15A
MTB2D5N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 3/9
Dynamic Ciss Coss Crss
Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2
Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2
tf *1, 2
Rg
-
-
2633 471 279 54 27.5 9.1 11.6 18 21 63.4 15.2
1.5
-
-
Source-Drain Diode
IS *1
-- 9
ISM *3
- - 36
VSD *1
- 0.69 1
trr
- 15.4
-
Qrr
- 6.7
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
pF
nC
ns Ω
A
V ns nC
VGS=0V, VDS=15V, f=1MHz
VDS=15V, VGS=10V, ID=20A
VDS=15V, ID=20A, VGS=10V, RGS=3Ω f=1MHz
IS=1A, VGS=0V IF=20A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB2D5N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 4/9
BVDSS, Normalized Drain-Source Breakdown Voltage
Typical Characteristics
Typical Output Characteristics
120 10V,9V,8V,7V,6V,5V
100
80 4V
60
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
ID, Drain Current(A)
40 3.5V
20
0 0
VGS=2.5V
3V
12 34 VDS, Drain-Source Voltage(V)
5
Static Drain-Source On-State resistance vs Drain Current 10
0.8 ID=250μA, VGS=0V
0.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
VGS=4.5V
1
Tj=25°C 0.8
VGS=10V
0.6 Tj=150°C
0.4
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
1 0.1
1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
100
90 80 ID=19A
70 60
50 40
30 20
10 0
0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
0.2 0
4 8 12 16 IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.8 VGS=10V, ID=19A
2.4 RDSON@Tj=25°C : 2.7mΩ typ.
2
1.6 1.2
0.8 VGS=4.5V, ID=15A
0.4 RDSON@Tj=25°C : 3.6mΩ typ.
0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTB2D5N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Threshold Voltage vs Junction Tempearture 1.4
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
1000
Ciss 1.2 1
C oss 0.8
ID=1mA
GFS, Forward Transfer A.