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MTB2D5N03BQ8 Dataheets PDF



Part Number MTB2D5N03BQ8
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet MTB2D5N03BQ8 DatasheetMTB2D5N03BQ8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB2D5N03BQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.6mΩ(typ) Symbol MTB2D5N03BQ8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source.

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CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB2D5N03BQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.6mΩ(typ) Symbol MTB2D5N03BQ8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB2D5N03BQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB2D5N03BQ8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.5mH, ID=30A, VDD=20V Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=70℃ TC=25℃ TC=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS IDSM ID IDM IAS EAS EAR PDSM PD Tj, Tstg Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 2/9 Limits 30 ±20 21 16.8 30 19 120 *1 30 225 *3 0.6 *2 3.1 *4 2.0 *4 6.3 2.5 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Rth,j-c Rth,j-a 20 40 *4 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle≤1%. 3. 100% tested by conditions of L=0.5mH, VGS=10V, IAS=19A, VDD=20V. 4. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 30 1.0 - 2.5 V VGS=0V, ID=250μA VDS = VGS, ID=250μA - 23.6 - S VDS =10V, ID=18A - - ±100 nA VGS=±20V - - 1 25 μA VDS =30V, VGS =0V VDS =30V, VGS =0V, Tj=85°C - 2.7 3.6 3.4 4.7 mΩ VGS =10V, ID=19A VGS =4.5V, ID=15A MTB2D5N03BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 3/9 Dynamic Ciss Coss Crss Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg - - 2633 471 279 54 27.5 9.1 11.6 18 21 63.4 15.2 1.5 - - Source-Drain Diode IS *1 -- 9 ISM *3 - - 36 VSD *1 - 0.69 1 trr - 15.4 - Qrr - 6.7 - Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. pF nC ns Ω A V ns nC VGS=0V, VDS=15V, f=1MHz VDS=15V, VGS=10V, ID=20A VDS=15V, ID=20A, VGS=10V, RGS=3Ω f=1MHz IS=1A, VGS=0V IF=20A, dIF/dt=100A/μs Recommended Soldering Footprint MTB2D5N03BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 4/9 BVDSS, Normalized Drain-Source Breakdown Voltage Typical Characteristics Typical Output Characteristics 120 10V,9V,8V,7V,6V,5V 100 80 4V 60 Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 ID, Drain Current(A) 40 3.5V 20 0 0 VGS=2.5V 3V 12 34 VDS, Drain-Source Voltage(V) 5 Static Drain-Source On-State resistance vs Drain Current 10 0.8 ID=250μA, VGS=0V 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V 1 Tj=25°C 0.8 VGS=10V 0.6 Tj=150°C 0.4 RDS(ON), Static Drain-Source OnState Resistance(mΩ) 1 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 90 80 ID=19A 70 60 50 40 30 20 10 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance 0.2 0 4 8 12 16 IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture 2.8 VGS=10V, ID=19A 2.4 RDSON@Tj=25°C : 2.7mΩ typ. 2 1.6 1.2 0.8 VGS=4.5V, ID=15A 0.4 RDSON@Tj=25°C : 3.6mΩ typ. 0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTB2D5N03BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10000 Threshold Voltage vs Junction Tempearture 1.4 VGS(th), Normalized Threshold Voltage Capacitance---(pF) 1000 Ciss 1.2 1 C oss 0.8 ID=1mA GFS, Forward Transfer A.


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