B536

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Product Specification 2SB536 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE -130 -120 -5 -1.5 -3.0 -0.3 1.5 20 150 -50~150 UNIT V V V A A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER Product Specification 2SB536 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A ICBO Collector cut-off current VCB=-120V; IE=0 -120 V -2.0 V -1.5 V -1.0 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 µA hFE-1 DC current gain IC=-5mA ; VCE=-5V 25 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 40 250 COB Output capacitance fT Transition frequency IE=0 ...