Document
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
• Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664) • Climatic classification 55/100/21 (IEC 60068 part 1) • Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection • Low temperature coefficient of CTR • CTR offered in 3 groups • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) • Rated recurring peak voltage (repetitive) VIORM = 600 VRMS • Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 275 • Thickness through insulation ≥ 0.75 mm • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
B 6
C 5
E 4
1
2
3
A (+) C (-) nc
V D E
17186
e3
Pb
Pb-free
For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
Description
The CNY75A/ B/ C/ GA/ GB/ GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
VDE Standards
These couplers perform safety functions according to the following equipment standards:
Agency Approvals
• UL1577, File No. E76222 System Code A, Double Protection • BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • VDE related features: • Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • FIMKO (SETI): EN 60950, Certificate No. 12399
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending
Optocoupler for electrical safety requirements
IEC 60950/ EN 60950
Office machines (applied for reinforced isolation for mains voltage
≤ 400 VRMS) VDE 0804 IEC 60065
Telecommunication apparatus and data processing
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I - IV at mains voltage ≤ 300 V
Document Number 83536 Rev. 1.7, 26-Oct-04
Safety for mains-operated electronic and related house hold apparatus
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CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors Order Information
Part CNY75A CNY75B CNY75C CNY75GA CNY75GB CNY75GC Remarks CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 For additional information on the available options refer to Option Information.
G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp ≤ 10 µs Test condition Symbol VR IF IFSM Pdiss Tj Value 5 60 3 100 125 Unit V mA A mW °C
Output
Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp ≤ 10 ms Test condition Symbol VCBO VCEO VECO IC ICM Pdiss Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW °C
Coupler
Parameter AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s t = 1 min Test condition Symbol VISO Ptot Tamb Tstg Tsld Value 3750 250 - 55 to + 100 - 55 to + 125 260 Unit VRMS mW °C °C °C
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Document Number 83536 Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Junction capacitance VR = 6 V VR = 0, f = 1 MHz Test condition IF = 50 mA Symbol VF IR Cj 50 Min Typ. 1.25 Max 1.6 10 Unit V µA pF
Output
Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector-emitter leakage current Test condition IC = 100 µA IC = 1 mA IE = 100 µA VCE = 20 V, IF = 0 Symbol VCBO VCEO VECO ICEO Min 90 90 7 150 Typ. Max Unit V .