2SC4228

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4228 DESCRIPTION ·High fT 8.0GHz TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz ·Low Cre 0.3pF TYP., @VCB = 3 V, IE = 0, f = 1 MHz ·High ︱S21e︱2 7.5 dB TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 35 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 5mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 3V ; f= 2GHz Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 3V; f= 1MHz IC= 5mA ; VCE= 3V; f= 2GHz NF Noise Figure IC= 5mA ; VCE= 3V; f= 2GHz  hFE Classification Class R43 R44 R45 Marking R43 R44 R45 hFE 50-100 80-160 125-250 2SC4228 MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 250 5.5 8.0 GHz 0.3 0.7 pF 5.5 7.5 dB 1.9 3.2 dB isc websi...