2SC4293

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4293 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·Built-in Damper Diode ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4293 CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE-1 DC current gain IC= 1A; VCE= 5V 8 hFE-2 DC current gain IC= 4A; V...