isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4988
DESCRIPTION ·High Gain Bandwidth Product
fT = 8.5 GHz TYP...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC4988
DESCRIPTION ·High Gain Bandwidth Product
fT = 8.5 GHz TYP. ·High Gain, Low Noise Figure
PG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in VHF ~ UHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
9
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.1
A
0.8
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC4988
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
ICEO
Collector Cutoff Current
VCE= 9V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 1.5V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 5V; f= 1.0MHz
PG
Power Gain
IC= 20mA ; VCE= 5V; f= 900MHz
NF
Noise Figure
IC= 5mA ; VCE= 5V; f= 900MHz
MIN TYP. MAX UNIT
15
V
1.0 μA
1.0 μA
10 μA
50
250
5.5 8.5
GHz
1.1 1.6 pF
7.5 10.5
dB
1.3 2...