isc Silicon NPN Power Transistor
2SC5027
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High...
isc Silicon
NPN Power
Transistor
2SC5027
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1.5
A
50
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
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isc Silicon
NPN Power
Transistor
2SC5027
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BVEBO
Emitter -Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0
800
V
BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0
1100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE1
DC Current Gain
IC= 0.2A; VCE= 5V
10
40
hFE2
DC Current Gain
IC= 1A; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
60
pF
fT
Current-Gain—Bandwidth Product
IE=...