2SC5084

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5084 DESCRIPTION ·High Gain Bandwidth Product fT = 7 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 80 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 40 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5084 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA hFE DC Current Gain IC= 20mA ; VCE= 10V 80 240 ︱S21e︱2 Insertion Power Gain IC= 20mA;VCE= 10V; f= 500MHz 16.5 dB ︱S21e︱2 Insertion Power Gain IC= 20mA;VCE= 10V; f= 1GHz 7.5 11 dB fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 5 7 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.0 pF Cre Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 ...