2SC5089

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5089 DESCRIPTION ·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 40 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5089 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 8V ︱S21e︱2 Insertion Power Gain IC= 20mA;VCE= 8V; f= 1GHz ︱S21e︱2 Insertion Power Gain IC= 20mA;VCE= 8V; f= 2GHz fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz Cre Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz NF Noise Figure IC= 5mA ; VCE= 8V;f= 1GHz NF Noise Figure IC= 5mA ; VCE= 8V;f= 2GHz MIN...