2SC5116

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5116 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-Peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8A 40 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5116 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 700V; IE= 0 ICEO Collector Cutoff Current VCE= 500V; IB= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 5V MIN TYP. MAX UNIT 500 V 700 V 1.5 V 1.3 V 0.1 mA 1.0 mA 0.1 mA 10 50 isc Website：www.iscsemi.cn ...