2SC5172

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage : VCEO =400V APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications isc Product Specification 2SC5172 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 25 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A; IB= 0.25A ICBO Collector Cutoff Current VCB=500V ; IE=0 IEBO Emitter Cutoff Current VEB=7V ; IC=0 hFE-1 DC Current Gain IC=1mA ; VCE= 5V hFE-2 DC Current Gain IC=0.5 A ; VCE= 5V MIN TYP. MAX UNIT 400 V 600 V 1.0 V 1.3 V 20 μA 100 nA 13 20 65 isc Website：www.iscsemi.cn 2 ...