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2SC5949

Toshiba Semiconductor

Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 2SC5949 Power Amplifier Applications Unit: mm • Compleme...


Toshiba Semiconductor

2SC5949

File Download Download 2SC5949 Datasheet


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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 2SC5949 Power Amplifier Applications Unit: mm Complementary to 2SA2121 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 200 200 5 15 1.5 220 150 −55 to 150 V V V A A W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC JEITA ― ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-21F1A Weight: 9.75 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 Electrical Characteristics (Tc = 25°C) Characteristic Symbol Test Conditions Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacita...




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