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2SD1172 Dataheets PDF



Part Number 2SD1172
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1172 Datasheet2SD1172 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1172 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15.

  2SD1172   2SD1172


2SD1171 2SD1172 2SD1173


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