2SD1173

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1173 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 3.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 70 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1173 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Base Cutoff Current hFE DC Current Gain IC= 3.0A; IB= 1.0A VCB=750V; IE= 0 VCB=1500V; IE= 0 IC= 3A; VCE= 10V 4.0 V 1.5 V 50 uA 1 mA 6 20 VECF C-E Diode Forward Voltage IF= 4A 2.5 V Switching Times tstg Storage Time tf Fall Time IC = 3A,IB1 = ...