isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching S...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier ,power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
130
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
5
A
1.4 W
25
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SD1516
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
IC= 0.5A ,IB1= IB2= 50mA
tf
Fall Time
2SD1516
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
10
μA
50
μA
4...