2SD1516

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 1.4 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1516 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 2V hFE-2 DC Current Gain IC= 0.5A ; VCE= 2V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V Switching Times ton Turn-on Time tstg Storage Time IC= 0.5A ,IB1= IB2= 50mA tf Fall Time 2SD1516 MIN TYP. MAX UNIT 80 V 0.5 V 1.5 V 10 μA 50 μA 4...