isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1200V (Min) ·High Switching Speed ·High R...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCES
Collector-Emitter Voltage
1200
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
2
A
ICP
Collector Current-Peak
6
A
IBP
Base Current-Peak
2.5
A
IBP
Reverse Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1575
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
2SD1575
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 750V ; IE= 0 VCB= 1200V ; IE= 0
50 μA 1.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V ; IC= 0
50 μA
hFE
DC Current Gain
IC= 2A; VCE= 5V
2
Switching times
tstg
Storage Time
tf
Fall Time
IC= 2.5A; IB1(end)= 1....
